eo_logo
 
Product added to cart

Normal Response, 44.0mm2, Silicon Detector

Silicon Photodiodes

×
Stock #54-035 Contact Us
×
Quantity Selector - Use the plus and minus buttons to adjust the quantity. +
€74,00
Qty 1-4
€74,00
Qty 5+
€65,00
Volume Pricing
Request Quote
Prices shown are exclusive of VAT/local taxes
Get Product Downloads
Operating Temperature (°C):
-40 to 100
Type:
Biased
Typical Applications:
High light levels, pulse detectors, AC light measurement
Terminal Capacitance (pF):
700 @ 0 V; 130 @ 10 V
Rise Time (ns):
24 @ -10 V/50 Ω, 632nm
Voltage Bias, VBias (V):
-10
Responsivity @ 970nm (A/W):
0.65
Active Area (mm2):
44.0
Noise Equivalent Power NEP (W/ Hz1/2):
2.8 x 10-14
Detectivity (cmHz1/2/W):
2.37 x 1013 @ -10 V, 970nm
Maximum Breakdown Voltage (V):
30.00
Model Number:
PIN-44D
Note:
Normal Response
Construction:
PIN
Outer Diameter (inches):
0.550
Dark Current Id (nA):
1 @ 10V
Length of Leads (inches):
1.50
Protective Window:
Borosilicate
Package:
TO-8

Regulatory Compliance

RoHS:
Certificate of Conformance:

Product Family Description

Through the photovoltaic effect, detectors provide a means of transforming light energy to an electrical current. The root of the theory behind this phenomenon is a small energy gap between the valence and conduction bands of the detector. When light, with enough energy to excite an electron from the valence to the conduction band, is incident upon the detector, the resulting accumulation of charge leads to a flow of current in an external circuit. Since light is not the only source of energy that can excite an electron, detectors will have some amount of current that is not representative of incident light. For example, fluctuations in thermal energy can easily be mistaken for light intensity changes. A variety of these “non-light” contributions are present and, when summed up, make up the total noise within the detector.

The ratio of the overall signal output to the noise level is known as the signal to noise ratio (s/n) and can be used to determine if noise will be a concern within a particular application. While noise is certainly a key means of characterizing detectors, it is only one of the characteristics which should be considered when selecting a detector.

Different Operation Modes

Photovoltaic (Unbiased): During PV operation, no external bias is applied to the photodiode. Since Dark Current is a function of bias magnitude, PV operation eliminates Dark Current as a source of noise. In this case, the NEP will be lower, thereby allowing greater sensitivity at lower wavelengths. This makes it ideal for low signal detection. One disadvantage is the slightly lower responsivity at higher wavelengths (see graph).

Photoconductive (Biased): During PC operation, a reverse bias on the photodiode results in a number of response advantages, such as a faster rise time. This makes this type of operation more suitable for high frequency applications. One inconvenience is that the dark current increases with this applied biased current, so noise is introduced into the system.

Title CompareStock Number  Price Buy
C-Mount, TO-8 Detector Mount #58-733 €42,00 €84,00 Qty 5+ €74,50   Request Quote
  • 3-4 days
    ×
Units: inches
Units: inches
Filter

How do I use your silicon detectors?

Photodiode

Photosensitivity

Photovoltaic Effect

Quantum Efficiency (QE)

Responsivity

RMS Noise

Shunt Resistance

Silicon Detector

Spectral Response

Amplifiers

Breakdown Voltage (BDV)

Capacitance

Dark Current

Detectivity

Fall Time

Noise Equivalent Power (NEP)

I am trying to get a sample read out from a laser diode on an oscilloscope. I get a good pulse signal if I shine my keychain flashlight on the detector, but a very noisy signal from the diode itself. What could be causing the noise in this system?

Acceptance Angle

Basic Principles of Silicon Detectors

Silicon Detectors are used to transform light energy into an electrical current. Find out more about the different operation modes and terms at Edmund Optics.

View Now

Signal-to-Noise Ratio (SNR)

Cut-Off Wavelength

Cut-On Wavelength

Dynamic Range